The silicon nitride ceramic substrate boasts numerous advantages, such as high strength, high toughness, and exceptional thermal conductivity (130W/(m-k)).Furthermore, its thermal expan sion coefficient closely matches that of Si, SiC, and GaN semiconductors.Consequently, the silicon nitride ceramic substrate is an ideal choice for packaging high-power modules, making it widely regarded as the most suitable ceramic substrate option.
Our company utilizes the direct nitridation process to produce high-purity silicon powder. Through our unique patented technology, we control the silicon material, nitriding process, and refining process to prepare CF-HJ silicon nitride powder with high purity, a high a phase content, a narrow particle size distribution, and exceptional sintering activity. This type of silicon nitride powder has effectively terminated foreign monopolies and can serve as a fully viable substitute for imported silicon nitride powder of the same quality level.
|
Test item |
Unit |
Index range |
Testing equipment or method |
|
α phase |
% |
≥90 |
X-ray diffractometer JC/T 2342-2015 |
|
Fe |
ppm |
≤200 |
Atomic absorption method ISO10058-3:2008 |
|
Al |
ppm |
≤200 |
|
|
Ca |
ppm |
≤200 |
|
|
N |
% |
≥38.5 |
Kjeldahl nitrogen apparatus GB/T 16555-2017 |
|
Frss Si |
% |
<0.2 |
Gas volumetric methpd GB/T 16555-2017 |
|
C |
% |
≤0.10 |
High frequmency infrared carbon analyzer GB/T 16555-2017 |
|
D50 |
μm |
≤0.9 |
Laser particle size analyzer GB/T19077-2016 |
|
O |
% |
≤1.4 |
Inert gas pulse infrared thermal conductivity method GB/T 16555-2017 |
